Effect of boron on gate oxide degradation and reliability in PMOS devices

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1293-1297

  Brozek, Tomasz ^a   Kyono, Carl ^a   Ilderem, Vida ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

GATE OXIDE DEGRADATION;

MOS DEVICES;

EID: 0035417347     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00267-7     Document Type: Article

References (6)

1. Improving gate oxide integrity in p/sup +/pMOSFET by using large grain size polysilicon gate
2. Impact of boron penetration on gate oxide reliability and device lifetime in p/sup +/-poly PMOSFETs
3. The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices
4. Impact of boron penetration at P/sup +/-poly/gate oxide interface on deep-submicron device reliability for dual-gate CMOS technologies
5. Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics
6. Stress-induced leakage current in p/sup +/ poly MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/gate material