Hydrogen molecules in boron-doped crystalline silicon

Semiconductor Science and Technology

Volumn 14, Issue 1, 1999, Pages 77-80

  Pritchard, R E ^a   Tucker, J H ^a   Newman, R C ^a   Lightowlers, E C ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; COMPOSITION EFFECTS; CRYSTALLINE MATERIALS; DISSOCIATION; HYDROGEN; HYDROGENATION; MOLECULAR DYNAMICS; MOLECULAR VIBRATIONS; QUENCHING; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

FLOAT ZONE SILICON; INFRARED ABSORPTION MEASUREMENTS;

SEMICONDUCTING SILICON;

EID: 0032738720     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/1/011     Document Type: Article

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