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Volumn 104, Issue 8, 2008, Pages

Ionization and shielding of interface states in native p+ -Si/ SiO2 probed by electric field induced second harmonic generation

(5) Scheidt, T a Rohwer, E G a Neethling, P a Von Bergmann, H M a Stafast, H b

a STELLENBOSCH UNIVERSITY (South Africa)

b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; HARMONIC ANALYSIS; HARMONIC GENERATION; IONIZATION; NONLINEAR OPTICS; PULSED LASER APPLICATIONS; ULTRASHORT PULSES;

ANISOTROPY PATTERNS; BORON DOPED; BORON DOPING CONCENTRATIONS; DOPED SAMPLES; FEMTOSECOND LASER PULSES; FIELD COMPONENTS; HOLE PAIRS; INCIDENT INTENSITIES; INTERFACE DEFECTS; INTERFACE STATES; NONMONOTONIC BEHAVIORS; PHOTOEXCITED ELECTRONS; SECOND HARMONICS; SECOND-HARMONIC GENERATIONS; SIGN REVERSALS; TEMPORAL EVOLUTIONS; ULTRA FASTS;

ELECTRIC GENERATORS;

EID: 55249116535 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3000051 Document Type: Article

Times cited : (29)

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