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Volumn 407, Issue 15, 2012, Pages 2989-2992

First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO 2

(3) Oh, Young Jun a Noh, Hyeon Kyun a Chang, K J a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

B dopants; B segregation; Dopant segregation; Metal oxide semiconductor field effect transistor; Si SiO 2 interface

Indexed keywords

B SEGREGATION; BOND DEFECTS; CRYSTALLINE SI; DOPANT SEGREGATION; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; FIRST-PRINCIPLES STUDY; METAL OXIDE SEMICONDUCTOR; SI-SI DIMER;

BORON; CALCULATIONS; CRYSTALLINE MATERIALS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; SEGREGATION (METALLOGRAPHY); SILICON;

AMORPHOUS SILICON;

EID: 84862002918 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.08.050 Document Type: Conference Paper

Times cited : (7)

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