Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture

Nanotechnology

Volumn 24, Issue 4, 2013, Pages

  McKibbin, S R ^a   Scappucci, G ^a   Pok, W ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CONDUCTANCE MODULATIONS; CRYSTALLINE SILICONS; DOPANT PROFILE; EPITAXIAL OVERGROWTH; LATERAL CONFINEMENT; LOW TEMPERATURES; MULTIPLE LAYERS; QUANTUM COMPUTING; SILICON CIRCUITS; SILICON WIRES; SINGLE-CRYSTAL MATERIALS; THREE-DIMENSIONAL ARCHITECTURE;

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GATE DIELECTRICS; LEAKAGE CURRENTS; MONOLAYERS; PHOSPHORUS; QUANTUM COMPUTERS; SEPARATION; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS; WIRE;

SILICON;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GAS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GASES; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

MLCS; MLOWN;

EID: 84872159588     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/4/045303     Document Type: Article

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