Investigating the regrowth surface of Si:P δ -layers toward vertically stacked three dimensional devices

Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

  McKibbin, S R ^a   Clarke, W R ^a   Fuhrer, A ^a   Reusch, T C G ^b   Simmons, M Y ^a,b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Australian Research Council Centre of Excellence for Quantum Computer Technology   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CARRIER DENSITY; DOPANT ACTIVATION; DOPANT INCORPORATION; HALL MEASUREMENTS; LOW TEMPERATURES; MULTI-LAYER DEVICES; NM RESOLUTION; REGROWTH INTERFACES; SPATIAL DIMENSION; SURFACE QUALITIES; THREE-DIMENSIONAL DEVICES;

SCANNING TUNNELING MICROSCOPY; THREE DIMENSIONAL;

SILICON;

EID: 71949098775     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3269924     Document Type: Article

References (16)

1. V. V. Zhirnov, R. K. Cavin, D. J. C. Herr, and T. A. Wooldridge, IEEE Trans. Semicond. Manuf. 0894-6507 15, 157 (2002). 10.1109/66.999587 (Pubitemid 34669728)
2. J. W. Lyding, G. C. Abeln, T. -C. Shen, C. Wang, and J. R. Tucker, J. Vac. Sci. Technol. B 1071-1023 12, 3735 (1994). 10.1116/1.587433
3. S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 0031-9007 91, 136104 (2003). 10.1103/PhysRevLett.91.136104
4. F. R. Ruess, L. Oberbeck, M. Y. Simmons, K. E. J. Goh, A. R. Hamilton, T. Hallam, S. R. Schofield, N. J. Curson, and R. G. Clark, Nano Lett. 1530-6984 4, 1969 (2004). 10.1021/nl048808v
5. A. Fuhrer, M. Fuechsle, T. C. G. Reusch, B. Weber, and M. Y. Simmons, Nano Lett. 1530-6984 9, 707 (2009). 10.1021/nl803196f
6. L. Oberbeck, N. J. Curson, M. Y. Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, and R. G. Clark, Appl. Phys. Lett. 0003-6951 81, 3197 (2002). 10.1063/1.1516859 (Pubitemid 35360536)
7. D. J. Frank, Solid-State Electron. 0038-1101 46, 315 (2002). 10.1016/S0038-1101(01)00102-2 (Pubitemid 34141216)
8. J. M. Bennett, O. Warschkow, N. A. Marks, N. J. Curson, S. R. Schofield, T. C. G. Reusch, M. W. Radny, P. V. Smith, D. R. McKenzie, and M. Y. Simmons, Phys. Rev. B 0163-1829 79, 165311 (2009).
9. Y. Wang, X. X. Chen, and R. J. Hamers, Phys. Rev. B 0163-1829 50, 4534 (1994). 10.1103/PhysRevB.50.4534
10. J. E. Vasek, Z. Zhang, C. T. Salling, and M. G. Lagally, Phys. Rev. B 0163-1829 51, 17207 (1995). 10.1103/PhysRevB.51.17207
11. G. G. Jernigan and P. E. Thompson, Thin Solid Films 0040-6090 380, 114 (2000). 10.1016/S0040-6090(00)01482-6 (Pubitemid 32071628)
12. W. Wulfhekel, H. J. W. Zandvliet, B. J. Hattink, G. Rosenfeld, G. Comsa, and B. Poelsema, Phys. Rev. B 0163-1829 58, 15359 (1998). 10.1103/PhysRevB.58. 15359
13. D. S. Lin, T. S. Ku, and T. J. Sheu, Surf. Sci. 0039-6028 424, 7 (1999). 10.1016/S0039-6028(98)00943-1
14. H. F. Wilson, O. Warschkow, N. A. Marks, N. J. Curson, S. R. Schofield, T. C. G. Reusch, M. W. Radny, P. V. Smith, D. R. McKenzie, and M. Y. Simmons, Phys. Rev. B 0163-1829 74, 195310 (2006). 10.1103/PhysRevB.74.195310 (Pubitemid 44730254)
15. J. Nara, T. Sasake, and T. Ohno, Phys. Rev. Lett. 0031-9007 79, 4421 (1997). 10.1103/PhysRevLett.79.4421
16. A. G. Baboul and H. B. Schlegel, J. Am. Chem. Soc. 0002-7863 118, 8444 (1996). 10.1021/ja960771w (Pubitemid 26305267)