Coherent single charge transport in molecular-scale silicon nanowires

Nano Letters

Volumn 5, Issue 6, 2005, Pages 1143-1146

  Zhong, Zhaohui ^a   Fang, Ying ^a   Lu, Wei ^a   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; COULOMB BLOCKADE OSCILLATIONS; QUANTUM LEVELS; SILICON NANOWIRES (SINW);

CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; OSCILLATIONS; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON; TRANSPORT PROPERTIES;

NANOSTRUCTURED MATERIALS;

NANOMATERIAL; NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; OSCILLOMETRY; TEMPERATURE; TIME;

NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; OSCILLOMETRY; SILICON; TEMPERATURE; TIME FACTORS;

EID: 21644450332     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050783s     Document Type: Article

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