Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy-patterned devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2562-2567

  Fuechsle, Martin ^a   Rueß, Frank J ^a   Reusch, Thilo C G ^a   Mitic, Mladen ^a   Simmons, Michelle Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MAGNETORESISTANCE; NANOWIRES; SCANNING TUNNELING MICROSCOPY; SILICON;

SILICON NANOWIRE; SURFACE GATE; TEMPERATURE MAGNETORESISTANCE;

ELECTRON BEAM LITHOGRAPHY;

EID: 37149010818     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2781512     Document Type: Article

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