Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

Nanotechnology

Volumn 18, Issue 4, 2007, Pages

  Ruess F J ^a   Goh, K E J ^a   Butcher, M J ^a   Reusch, T C G ^a   Oberbeck, L ^a   Weber, B ^a   Hamilton, A R ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; OHMIC CONTACTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DOPANT IMAGING TECHNIQUES; ELECTRON PHASE; MAGNETOTRANSPORT MEASUREMENT;

WIRE;

EID: 33846809345     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/4/044023     Document Type: Article

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