A single-atom transistor

Nature Nanotechnology

Volumn 7, Issue 4, 2012, Pages 242-246

  Fuechsle, Martin ^a   Miwa, Jill A ^a   Mahapatra, Suddhasatta ^a   Ryu, Hoon ^b   Lee, Sunhee ^c   Warschkow, Oliver ^d   Hollenberg, Lloyd C L ^e   Klimeck, Gerhard ^c   Simmons, Michelle Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Korea Institute of Science and Technology Information (KISTI)   (South Korea)

^c Purdue University   (United States)

^d UNIVERSITY OF SYDNEY   (Australia)

^e UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER CIRCUITS; ELECTRON TRANSPORT PROPERTIES; LATTICE CONSTANTS; LIQUEFIED GASES; OPTOELECTRONIC DEVICES; PHOSPHORUS; QUANTUM CHEMISTRY; QUANTUM COMPUTERS; SCANNING TUNNELING MICROSCOPY; SUPERFLUID HELIUM; TRANSISTORS;

ATOMIC SCALE STRUCTURES; CHARGING ENERGIES; ELECTRON TRANSPORT MEASUREMENTS; EPITAXIAL SILICON; LIQUID HELIUM TEMPERATURE; OPTICAL SPECTROSCOPY; SILICON SURFACES; SPATIAL ACCURACY;

CRYSTAL ATOMIC STRUCTURE;

HELIUM; PHOSPHORUS; SILICON;

ACCURACY; ARTICLE; ATOM; COMPUTER; COVALENT BOND; ELECTRON TRANSPORT; ELECTRONICS; ENERGY; NANOTECHNOLOGY; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; SURFACE PROPERTY;

EID: 84862776787     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2012.21     Document Type: Article

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