Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Hallam, T ^a   Reusch, T C G ^a   Oberbeck, L ^a   Curson, N J ^a   Simmons, M Y ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGEN; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SILICON;

ATOMIC SCALE DOPANT DEVICES; DOPANT NANOSTRUCTURES; HYDROGEN DESORPTION; THERMAL ANNEALING;

SEMICONDUCTOR DEVICES;

EID: 33847097807     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433138     Document Type: Article

References (27)

1. T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. Yang, R.-R. Du, and J. R. Tucker, J. Vac. Sci. Technol. B 22, 3182 (2004).
2. F. J. RueΒ, Nano Lett. 4, 1969 (2004).
3. M. Y. Simmons, Mol. Simul. 31, 505 (2005).
4. J. L. O'Brien, Phys. Rev. B 64, 161401 (R) (2001).
5. S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. RueΒ, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003).
6. J.-C. Shen, J.-Y. Ji, M. Zudov, R.-R. Du, J. Kline, and J. Tucker, Appl. Phys. Lett. 80, 1580 (2002).
7. L. Oberbeck, T. Hallam, N. J. Curson, M. Y. Simmons, and R. G. Clark, Appl. Surf. Sci. 212-213, 319 (2003).
8. T. Hallam, F. J. RueΒ, N. J. Curson, K. E. J. Goh, L. Oberbeck, M. Y. Simmons, and R. G. Clark, Appl. Phys. Lett. 86, 143116 (2005).
9. U. Höfer, L. Li, and T. F. Heinz, Phys. Rev. B 45, 9485 (1991).
10. M. Dürr, A. Biedermann, Z. Hu, U. Höfer, and T. F. Heinz, Science 296, 1838 (2002).
11. T. Vondrak and X.-Y. Zhu, Phys. Rev. Lett. 82, 1967 (1999).
12. T. Takahagi, A. Ishitani, H. Kuroda, Y. Nagasawa, H. Ito, and S. Wakao, J. Appl. Phys. 68, 2187 (1990).
13. J. Lyding, G. Abeln, T. Shen, C. Wang, and J. Tucker, J. Vac. Sci. Technol. B 12, 3735 (1994).
14. J. J. Boland, Phys. Rev. Lett. 67, 1539 (1991).
15. R. J. Hamers and U. K. Köhler, J. Vac. Sci. Technol. A 7, 2854 (1989).
16. T. C. G. Reusch, N. J. Curson, S. R. Schofield, T. Hallam, and M. Y. Simmons, Surf. Sci. 600, 318 (2006).
17. H. F. Wilson, Phys. Rev. Lett. 93, 226102 (2004).
18. D.-S. Lin, T.-S. Ku, and T.-J. Sheu, Surf. Sci. 424, 7 (1999).
19. Y. Wang, X. Chen, and R. J. Hamers, Phys. Rev. B 50, 4534 (1994).
20. N. J. Curson, S. R. Schofield, M. Y. Simmons, L. Oberbeck, J. L. OBrien, and R. G. Clark, Phys. Rev. B 69, 195303 (2004).
21. L. Kipp, R. D. Bringans, D. K. Biegelsen, J. E. Northrup, A. Garcia, and L.-E. Swartz, Phys. Rev. B 52, 5843 (1995).
22. A. van Dam, J. van Wingerden, M. J. Haye, P. M. L. O. Scholte, and F. Tuinstra, Phys. Rev. B 54, 1557 (1996).
23. J. Boland, Phys. Rev. Lett. 65, 3325 (1990).
24. Y. Wang, M. J. Bronikowski, and R. J. Hamers, J. Vac. Sci. Technol. A 12, 2051 (1994).
25. R. M. Tromp, R. J. Hamers, and J. E. Demuth, Phys. Rev. Lett. 55, 1303 (1985).
26. J. Dbrowski and H.-J. Müssig, Silicon Surfaces and the Formation of Interfaces (World Scientific, Singapore, 2000).
27. S. M. Sze, Semiconductor Devices-Physics and Technology (Wiley, New York, 1985).