Coulomb Blockade Effects in a Highly Doped Silicon Quantum Wire Fabricated on Novel Molecular Beam Epitaxy Grown Material

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 465-468

  Koester, Thomas ^a   Goldschmidtboeing, Frank ^a,b   Hadam, Birgit ^a,b   Stein, Josef ^a,b   Altmeyer, Stefan ^a,b   Spangenberg, Bernd ^a,b   Kurz, Heinrich ^a,b   Neumann, Robert ^a,b   Brunner, Karl ^a,b   Abstreiter, Gerd ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

BESOI; Coulomb blockade; Electron beam lithography; Molecular beam epitaxy; Silicon; Single electron tunneling transistors

Indexed keywords

ANISOTROPY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSISTORS;

COULOMB BLOCKADE EFFECTS; SINGLE ELECTRON TUNNELING TRANSISTORS (SETT);

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032614303     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.465     Document Type: Article

References (11)

1. Single Electron Tunneling, eds. H. Grabert and M. H. Devoret (Plenum, New York, 1992).
2. H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto and T. Ikoma: Appl. Phys. Lett. 68 (1996) 3585.
3. A. Ohata, A. Toriumi and K. Uchida: Jpn. J. Appl. Phys. 36 (1997) 1686.
4. K. Murase, Y. Takahashi, Y. Nakajima, H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, S. Horiguchi, M. Tabe and K. Izumi: Microelectron. Eng. 28 (1995) 399.
5. S. Altmeyer, A. Hamidi, B. Spangenberg and H. Kurz: J. Appl. Phys. 81 (1997) 8118.
6. R. A. Smith and H. Ahmed: J. Appl. Phys. 81 (1997) 2699.
7. E. Leobandung, L. Guo and S. Y. Chou: Appl. Phys. Lett. 67 (1995) 2338.
8. S. B. Field, M. A. Kastner, U. Meirav, J. H. F. Scott-Thomas, D. A. Antoniadis, H. I. Smith and S. J. Wind: Phys. Rev. B 42 (1990) 3523.
9. T.Sakamoto, H. Kawaura and T. Baba: Appl. Phys.Lett 72 (1998) 795.
10. K. Nakazato and H. Ahmed: Appl Phys. Lett. 66 (1995) 3170.
11. D. A. Averin, A. N. Korotov and K. K. Likharev: Phys. Rev. B 44 (1991) 6199.