Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

New Journal of Physics

Volumn 7, Issue , 2005, Pages

  Slinker, K A ^a   Lewis, K L M ^a   Haselby, C C ^a   Goswami, S ^a   Klein, L J ^a   Chu, J O ^b   Coppersmith, S N ^a   Joynt, Robert ^a   Blick, R H ^a   Friesen, Mark ^a   Eriksson, M A ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE OSCILLATIONS; SCHOTTKY TOP-GATED LEADS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRIC POTENTIAL; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 28144452224     PISSN: 13672630     EISSN: 13672630     Source Type: Journal    
DOI: 10.1088/1367-2630/7/1/246     Document Type: Article

References (33)

1. Tyryshkin A M, Lyon S A, Astashkin A V and Raitsimring A M 2003 Phys. Rev. B 68 193207
2. Wilamowski Z and Jantsch W 2002 Physica E 12 439
3. Gordon J P and Bowers K D 1958 Phys. Rev. Lett. 1 368
4. Feher G 1959 Phys. Rev. 114 1219-44
5. Feher G and Gere E A 1959 Phys. Rev. 114 1245-56
6. Chibi M and Hirai J 1972 J. Phys. Soc. Japan 33 730
7. Weitz P, Haug R J, vonKlitzing K and Schaffler F 1996 Surf. Sci. 362 542-6
8. Koester S J, Ismail K and Chu J O 1997 Semicond. Sci. Technol. 12 384-8
9. Khrapai V S, Shashkin A A and Dolgopolov V T 2003 Phys. Rev. B 67 113305
10. Lai K, Pan W, Tsui D C, Lyon S, Muhlberger M and Schaffler F 2004 Phys. Rev. Lett. 93 156805
11. Goswami S et al 2004 Preprint coml-mat/0408389
12. Loss D and DiVincenzo D P 1998 Phys. Rev. A 57 120
13. Vrijen R, Yablonovitch E, Wang K, Jiang H W, Balandin A, Roychowdhury V, Mor T and DiVincenzo D 2000 Phys. Rev. A 62 12306
14. Friesen M, Joynt R and Eriksson M A 2002 Appl. Phys. Lett. 81 4619
15. Friesen M, Rugheimer P, Savage D E, Lagally M G, van der Weide D W, Joynt R and Eriksson M A 2003 Phys. Rev. B 67 121301
16. Eriksson M A et al 2004 Quantum Inform. Process. 3 133
17. Notargiacomo A, Di Gaspare L, Scappucci G, Mariottini G, Evangelisti F, Giovine E and Leoni R 2003 Appl. Phys. Lett. 83 302
18. Klein L J et al 2004 Appl. Phys. Lett. 84 4047
19. Scappucci G, Di Gaspare L, Evangelisti F, Giovine E, Notargiacomo A, Leoni R, Piazza V, Pingue P and Beltram F 2005 Phys. Rev. B 71 245311
20. Qin H, Yasin S and Williams D A 2003 J. Vac. Sci. Technol. B 21 2852-5
21. Bo X Z, Rokhinson L P, Yin H Z, Tsui D C and Sturm J C 2002 Appl. Phys. Lett. 81 3263-5
22. Klein L J et al 2005 Preprint cond-mal/0503766
23. Sakr M R, Yablonovitch E, Croke E T and Jiang H W 2005 Preprint cond-mat/0504046
24. Elzerman J M, Hanson R, van Beveren L H W, Witkamp B, Vandersypen L M K and Kouwenhoven L P 2004 Nature 430 431-5
25. Koester S J, Ismail K, Lee K Y and Chu J O 1997 Appl. Phys. Lett. 71 1528
26. Tobben D, Wharam D A, Abstreiter G, Kotthaus J P and Schaffler F 1995 Phys. Rev. B 52 4704
27. Tobben D, Wharam D A, Abstreiter G, Kolthaus J P and Schaffler F 1995 Semiconduct. Sci. Technol. 10 711
28. Wieser U, Kunze U, Ismail K and Chu J O 2002 Physica E 13 1047
29. Dunford R B, Griffin N, Paul D J, Pepper M, Robbins D J, Churchill A C and Leong W Y 2000 Thin Solid Films 369 316
30. Ismail K, Arafa M, Stern F, Chu J O and Meyerson B S 1995 Appl. Phys. Lett. 66 842
31. Schaffler F 1997 Semicond. Sci. Technol. 12 1515-49
32. Holzmann M, Tobben D, Abstreiter G, Wendel M, Lorenz H, Kotthaus J P and Schaffler F 1995 Appl. Phys. Lett. 66 833
33. Kouwenhoven L P, Marcus C M, McEuen P L, Tarucha S, Westervelt R M and Wingreen N S 1997 Electron transport in quantum dots Mesoscopic Electron Transport vol 345, ed L L Sohn, L P Kouwenhoven and G Schon (Dordrecht: Kluwer) pp 16-23