Complementary switching in oxide-based bipolar resistive-switching random memory

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 70-77

  Nardi, Federico ^a,b   Balatti, Simone ^a   Larentis, Stefano ^c   Gilmer, David C ^d   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b Department of Intermolecular ^*  (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d SEMATECH   (United States)

Author keywords

Complementary switching (CS); crossbar array; metal insulator transition; resistive switching random access memory (RAM) (RRAM)

Indexed keywords

COMPLEMENTARY SWITCHING (CS); CROSSBAR ARCHITECTURE; CROSSBAR ARRAYS; HIGH DENSITY DATA STORAGE; NONLINEAR CHARACTERISTICS; PHYSICAL MECHANISM; RANDOM ACCESS MEMORIES; RESET CURRENTS; TIME-SCALES;

FLASH MEMORY; HAFNIUM OXIDES; LEAKAGE CURRENTS; MEMORY ARCHITECTURE; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84871799376     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2226728     Document Type: Article

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