Electrical behavior of memory devices based on fluorene-containing organic thin films

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Dimitrakis, Panagiotis ^a   Normand, Pascal ^a   Tsoukalas, Dimitris ^b   Pearson, Christopher ^c   Ahn, Jin H ^c   Mabrook, Mohammed F ^c   Zeze, Dagou A ^c   Petty, Michael C ^c   Kamtekar, Kiran T ^c   Wang, Changsheng ^c   Bryce, Martin R ^c   Green, Mark ^d  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c DURHAM UNIVERSITY   (United Kingdom)

^d KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; ELECTRODES; NANOCRYSTALS; NANOPARTICLES;

CONDUCTIVITY SWITCHING; ELECTRICAL BEHAVIORS; ELECTRICAL CONDUCTIVITY; NEGATIVE DIFFERENTIAL RESISTANCES; ORGANIC THIN FILMS; SWITCHING BEHAVIORS; UNIPOLAR VOLTAGE PULSE; VOLTAGE CHARACTERISTICS;

THIN FILMS;

EID: 50849123440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968551     Document Type: Article

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