A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 585-587

  Tran, X A ^a   Zhu, W G ^a   Gao, B ^b   Kang, J F ^b   Liu, W J ^a   Fang, Z ^a   Wang, Z R ^a   Yeo, Y C ^c   Nguyen, B Y ^d   Li, M F ^e   Yu, H Y ^f  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e FUDAN UNIVERSITY   (China)

^f SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Resistive random access memory (RAM) (RRAM); resistive switching; self rectify; unipolar

Indexed keywords

CMOS TECHNOLOGY; HIGH-DENSITY; LOW-RESISTANCE STATE; MATERIALS AND PROCESS; MEMORY PERFORMANCE; RANDOM ACCESS MEMORIES; RESISTANCE RATIO; RESISTIVE RAMS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS; SELF-RECTIFY; UNIPOLAR;

CMOS INTEGRATED CIRCUITS; SWITCHING SYSTEMS; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 84862787919     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2181971     Document Type: Article

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