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Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material

(3) Yeluri, Ramya a Swenson, Brian L a Mishra, Umesh K a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROJUNCTION; C-V CHARACTERIZATION; DIELECTRIC PASSIVATION; HIGH FREQUENCY; INTERFACE STATE DENSITY; N-POLAR;

DIAGNOSIS; DIELECTRIC MATERIALS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACE STATES; SILICON NITRIDE;

INTERFACES (MATERIALS);

EID: 84857855594 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3687355 Document Type: Article

Times cited : (31)

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