Threshold voltage control in Al0.72Ga0.28N/AlN/GaN HEMTs by work-function engineering

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 954-956

  Li, Guowang ^a   Zimmermann, Tom ^a   Cao, Yu ^a   Lian, Chuanxin ^a   Xing, Xiu ^a   Wang, Ronghua ^a   Fay, Patrick ^a   Xing, Huili Grace ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

Enhancement (E) mode; gallium nitride; molecular beam epitaxy (MBE); threshold voltage (Vth); transistor; work function

Indexed keywords

ALGAN; ENHANCEMENT (E) MODE; GATE LENGTH; GATE METALS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY (MBE); RECESS ETCHING; ROOM TEMPERATURE; WORK-FUNCTION DIFFERENCE;

ALUMINUM; DIGITAL INTEGRATED CIRCUITS; ELECTRON GAS; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLITHIC INTEGRATED CIRCUITS; THRESHOLD VOLTAGE; VOLTAGE REGULATORS; WORK FUNCTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956172361     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052912     Document Type: Article

References (16)

1. U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs\An overview of device operation and applications," Proc. IEEE, vol.90, no.6, pp. 1022-1031, Jun. 2002.
2. M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, "High electron mobility transistors based on a GaN/AlGaN heterojunction," Appl. Phys. Lett., vol.63, no.9, pp. 1214-1215, Aug. 1993.
3. 2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol.17, no.6, pp. 2755-2758, Nov. 1999.
4. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol.26, no.7, pp. 435-437, Jul. 2005.
5. C. Y. Chang, S. J. Pearton, C. F. Lo, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, and P. P. Chow, "Development of enhancement mode AlN/GaN high electron mobility transistors," Appl. Phys. Lett., vol.94, no.26, p. 263 505, Jun. 2009.
6. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate Injection Transistor (GIT)\A normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, vol.54, no.12, pp. 3393-3399, Dec. 2007.
7. M. Kuroda, T. Ueda, and T. Tanaka, "Nonpolar AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with a normally off operation," IEEE Trans. Electron Devices, vol.57, no.2, pp. 368-372, Feb. 2010.
8. T. Fujiwara, S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors," Appl. Phys. Express, vol.2, no.1, p. 011001, Jan. 2009.
9. H. Shen, M. Dutta, L. Fotiadis, P. G. Newman, R. P. Moerkirk, W. H. Chang, and R. N. Sacks, "Photoreflectance study of surface Fermi level in GaAs and GaAlAs," Appl. Phys. Lett., vol.57, no.20, pp. 2118-2120, Nov. 1990.
10. Z. Lin, W. Lu, J. Lee, D. Liu, J. S. Flynn, and G. R. Brandes, "Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions," Appl. Phys. Lett., vol.82, no.24, pp. 4364-4366, Jun. 2003.
11. A. Endoh, Y. Yamashita, K. Ikeda, M. Higashiwaki, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Non-recessed-gate enhancement-mode AlGaN/GaN high electron mobility transistors with high RF performance," Jpn. J. Appl. Phys., vol. 43, no. 4B, pp. 2255-2258, Apr. 2004
12. T. Zimmermann, D. Deen, Y. Cao, D. Jena, and H. Xing, "Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs," Phys. Stat. Sol.(C), vol.5, no.6, pp. 2030-2032, Apr. 2008.
13. Y. Cao, T. Zimmermann, H. Xing, and D. Jena, "Polarization- engineered removal of buffer leakage for GaN transistors," Appl. Phys. Lett., vol.96, no.4, p. 042 102, Jan. 2010.
14. A. C. Schmitz, A. T. Ping, M. A. Khan, Q. Chen, J. W. Yang, and I. Adesida, "Metal contacts to n-type GaN," J. Electron. Mater., vol.27, no.4, pp. 255-260, Dec. 1998.
15. J. Robertson and B. Falabretti, "Band offsets of high Ê gateoxideson III-V semiconductors," J. Appl. Phys., vol.100, no.1, p. 014 111, Jul. 2006.
16. 3 passivation," IEEE Electron Device Lett., vol.30, no.9, pp. 904-906, Sep. 2009.