Performance enhancement of normally-off plasma-assisted atomic layer deposited Al2O3/GaN metal-oxide-semiconductor field-effect transistor with postdeposition annealing

Japanese Journal of Applied Physics

Volumn 49, Issue 12, 2010, Pages

  Ha, Jong Bong ^a   Kim, Dong Seok ^a   Im, Ki Sik ^a   Kim, Ki Won ^a   Kang, Hee Sung ^a   Park, Ki Yeol ^b   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ATOMIC LAYER DEPOSITED; BEST VALUE; DEVICE PROPERTIES; DRAIN VOLTAGE; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE REGION; HETEROSTRUCTURES; HIGH QUALITY; LINEAR REGION; MAXIMUM DRAIN CURRENT; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; ON-RESISTANCE; PERFORMANCE ENHANCEMENTS; POST DEPOSITION ANNEALING; RECESSED GATE; SILICON SUBSTRATES; SURFACE PASSIVATION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ALUMINUM; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRON GAS; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MOS DEVICES; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TWO DIMENSIONAL ELECTRON GAS;

GALLIUM ALLOYS;

EID: 79551643935     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.126501     Document Type: Article

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