Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 152-155

  Miyazaki, Eiji ^a   Goda, Yuji ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Al2O3; GaN; HfO2; Interface state; MOSHFET

Indexed keywords

AL2O3; GAN; HFO2; INTERFACE STATE; MOSHFET;

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; HETEROJUNCTIONS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DIODES; TRANSISTORS;

GALLIUM NITRIDE;

EID: 79957968063     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.017     Document Type: Article

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