Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-State Electronics

Volumn 67, Issue 1, 2012, Pages 74-78

  Cico K ^a   Gregusova D ^a   Kuzmik J ^a,b   Jurkovic M ^a   Alexewicz, A ^b   Di Forte Poisson, M A ^c   Pogany, D ^b   Strasser, G ^b   Delage, S ^c   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

Al2O 3; Annealing; Current collapse; Field effect transistor; Forming gas; GaN; Gate lag; Heterostructure; High electron mobility transistor; InAlN; Insulation; Interface states; Metal oxide semiconductor high electron mobility transistor; Passivation; Processing; Temperature treatment; Thin oxide film

Indexed keywords

CURRENT COLLAPSE; FIELD EFFECTS; FORMING GAS; GAN; GATE-LAG; HIGH ELECTRON MOBILITY; INALN; INTERFACE STATES; METAL OXIDE SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; TEMPERATURE TREATMENT; THIN OXIDE FILMS;

ALUMINUM; ANNEALING; DIELECTRIC DEVICES; DIELECTRIC FILMS; DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; INSULATION; LEAKAGE CURRENTS; METAL ANALYSIS; METALLIC COMPOUNDS; MOS DEVICES; OXIDE FILMS; PASSIVATION; SCHOTTKY BARRIER DIODES; SHEET RESISTANCE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80455160198     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.09.002     Document Type: Article

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