Arsenic decapping and half cycle reactions during atomic layer deposition of Al2 O3 on In0.53 Ga0.47 As (001)

Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

  Shin, Byungha ^a   Clemens, Jonathon B ^b   Kelly, Michael A ^a   Kummel, Andrew C ^b   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CAPACITANCE VOLTAGE CHARACTERISTIC; HALF CYCLE; IN-SITU; INAS; REACTIVE SITE; TRIMETHYLALUMINUM;

ADSORPTION; ALUMINUM; ARSENIC; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; CAPACITANCE; GALLIUM; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SURFACE CHEMISTRY; THERMAL DESORPTION; THERMOANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE DEFECTS;

EID: 77954050779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3452336     Document Type: Article

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