SCOPUS 정보 검색 플랫폼

Scripta Materialia

Volumn 68, Issue 5, 2013, Pages 333-336

Combinatorial screening of work functions in Ta-C-N/HfO2/Si advanced gate stacks

(4) Chang, K S a Green, M L b Levin, I b De Gendt, S c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

c IMEC (Belgium)

Author keywords

Combinatorial methodology; Electrical properties; Refractory metals; Sputtering; Thin films

Indexed keywords

COMBINATORIAL METHODOLOGY; COMBINATORIAL SCREENINGS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL CHARACTERISTIC; GATE METALS; GATE STACKS; N CONTENT; OXIDE THICKNESS; P-TYPE;

ELECTRIC PROPERTIES; LOGIC GATES; REFRACTORY METALS; SILICON; SPUTTERING; THIN FILMS; WORK FUNCTION;

TANTALUM;

EID: 84871715574 PISSN: 13596462 EISSN: None Source Type: Journal
DOI: 10.1016/j.scriptamat.2012.11.006 Document Type: Article

Times cited : (5)

References (34)

1
- 60749133848
- R.F. Service Science 323 2009 1000
- (2009) Science , vol.323 , pp. 1000
- Service, R.F.¹

2
- 0001394083
- P.A. Packan Science 285 1999 2079
- (1999) Science , vol.285 , pp. 2079
- Packan, P.A.¹

3
- 0036508039
- H.-S.P. Wong IBM J. Res. & Dev. 46 2002 133
- (2002) IBM J. Res. & Dev. , vol.46 , pp. 133
- Wong, H.-S.P.¹

4
- 0346134980
- G.A. Brown, P.M. Zeitzoff, G. Bersuker, and H.R. Huff Mater. Today 7 2004 20
- (2004) Mater. Today , vol.7 , pp. 20
- Brown, G.A.¹ Zeitzoff, P.M.² Bersuker, G.³ Huff, H.R.⁴

5
- 0035872897
- G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

6
- 33748614600
- E.P. Gusev, V. Narayanan, and M.M. Frank IBM J. Res. & Dev. 50 2006 387
- (2006) IBM J. Res. & Dev. , vol.50 , pp. 387
- Gusev, E.P.¹ Narayanan, V.² Frank, M.M.³

7
- 33846274955
- J.K. Schaeffer, C. Capasso, R. Gregory, D. Gilmer, L.R.C. Fonseca, M. Raymond, C. Happ, M. Kottke, S.B. Samavedam, P.J. Tobin, and B.E. White Jr. J. Appl. Phys. 101 2007 14503
- (2007) J. Appl. Phys. , vol.101 , pp. 14503
- Schaeffer, J.K.¹ Capasso, C.² Gregory, R.³ Gilmer, D.⁴ Fonseca, L.R.C.⁵ Raymond, M.⁶ Happ, C.⁷ Kottke, M.⁸ Samavedam, S.B.⁹ Tobin, P.J.¹⁰ White, Jr.B.E.¹¹

8
- 31544455866
- S.M. Aouadi, Y. Zhang, P. Basnyat, S. Stadler, P. Filip, M. Williams, J.N. Hilfiker, N. Singh, and J.A. Woollam J. Phys.: Condensed Mater. 18 2006 1977
- (2006) J. Phys.: Condensed Mater. , vol.18 , pp. 1977
- Aouadi, S.M.¹ Zhang, Y.² Basnyat, P.³ Stadler, S.⁴ Filip, P.⁵ Williams, M.⁶ Hilfiker, J.N.⁷ Singh, N.⁸ Woollam, J.A.⁹

9
- 44349124490
- T.J. Park, J.H. Kim, J.H. Jang, K.D. Na, C.S. Hwang, G.M. Kim, K.J. Choi, and J.H. Jeong Appl. Phys. Lett. 92 2008 202902
- (2008) Appl. Phys. Lett. , vol.92 , pp. 202902
- Park, T.J.¹ Kim, J.H.² Jang, J.H.³ Na, K.D.⁴ Hwang, C.S.⁵ Kim, G.M.⁶ Choi, K.J.⁷ Jeong, J.H.⁸

10
- 0344362751
- edition
- International Technology Roadmap for Semiconductors (ITRS), 2009 edition. Available from: < http://www.itrs.net >
- (2009) International Technology Roadmap for Semiconductors (ITRS)

11
- 84871718735
- edition
- International Technology Roadmap for Semiconductors (ITRS), Process Integration, Devices, and Structures, 2005 edition. Available from: < http://www.itrs.net >
- (2005) International Technology Roadmap for Semiconductors (ITRS), Process Integration, Devices, and Structures

12
- 34548662439
- Y. Sugimoto, M. Kajiwara, K. Yamamoto, and Y. Suehiro Appl. Phys. Lett. 91 2007 112105
- (2007) Appl. Phys. Lett. , vol.91 , pp. 112105
- Sugimoto, Y.¹ Kajiwara, M.² Yamamoto, K.³ Suehiro, Y.⁴

13
- 0000750359
- X.D. Xiang, and P.G. Schultz Phys. C 282-287 1997 428
- (1997) Phys. C , vol.282-287 , pp. 428
- Xiang, X.D.¹ Schultz, P.G.²

14
- 0029325254
- X.D. Xiang, X. Sun, G. Briceno, Y. Lou, K.A. Wang, H. Chang, W.G. Wallace-Freedman, S.W. Chen, and P.G. Schultz Science 268 1995 1738
- (1995) Science , vol.268 , pp. 1738
- Xiang, X.D.¹ Sun, X.² Briceno, G.³ Lou, Y.⁴ Wang, K.A.⁵ Chang, H.⁶ Wallace-Freedman, W.G.⁷ Chen, S.W.⁸ Schultz, P.G.⁹

15
- 33749557453
- K.-S. Chang, M. Green, J. Suehle, E. Vogel, H. Xiong, J. Hattric-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, and M. Gardner Appl. Phys. Lett. 89 2006 142108
- (2006) Appl. Phys. Lett. , vol.89 , pp. 142108
- Chang, K.-S.¹ Green, M.² Suehle, J.³ Vogel, E.⁴ Xiong, H.⁵ Hattric-Simpers, J.⁶ Takeuchi, I.⁷ Famodu, O.⁸ Ohmori, K.⁹ Ahmet, P.¹⁰ Chikyow, T.¹¹ Majhi, P.¹² Lee, B.-H.¹³ Gardner, M.¹⁴

16
- 53749106002
- K.-S. Chang, M.L. Green, J.R. Hattrick-Simpers, I. Takeuchi, J.S. Suehle, O. Celik, and S. De Gendt IEEE Trans. Electr. Dev. 55 2008 2641
- (2008) IEEE Trans. Electr. Dev. , vol.55 , pp. 2641
- Chang, K.-S.¹ Green, M.L.² Hattrick-Simpers, J.R.³ Takeuchi, I.⁴ Suehle, J.S.⁵ Celik, O.⁶ De Gendt, S.⁷

17
- 34249023092
- M.L. Green, K.-S. Chang, S. De Gendt, T. Schram, and J. Hattrick-Simpers Microelectron. Eng. 84 2007 2209
- (2007) Microelectron. Eng. , vol.84 , pp. 2209
- Green, M.L.¹ Chang, K.-S.² De Gendt, S.³ Schram, T.⁴ Hattrick-Simpers, J.⁵

18
- 77952973396
- K.-S. Chang, M.L. Green, H.M. Lane, I. Levin, J.R. Hattrick-Simpers, C. Jaye, J. Woicik, D. Fischer, I. Takeuchi, and S. De Gendt Appl. Phys. Lett. 96 2010 192114
- (2010) Appl. Phys. Lett. , vol.96 , pp. 192114
- Chang, K.-S.¹ Green, M.L.² Lane, H.M.³ Levin, I.⁴ Hattrick-Simpers, J.R.⁵ Jaye, C.⁶ Woicik, J.⁷ Fischer, D.⁸ Takeuchi, I.⁹ De Gendt, S.¹⁰

19
- 0001954222
- J.R. Hauser, and K. Ahmed AIP Conf. Proc. 449 1998 235
- (1998) AIP Conf. Proc. , vol.449 , pp. 235
- Hauser, J.R.¹ Ahmed, K.²

20
- 0001058191
- W. Gordy, and W.J.O. Thomas J. Chem. Phys. 24 1956 439
- (1956) J. Chem. Phys. , vol.24 , pp. 439
- Gordy, W.¹ Thomas, W.J.O.²

21
- 34248655163
- J.K. Schaeffer, D.C. Gilmer, C. Capasso, S. Kalpat, B. Taylor, M.V. Raymond, D. Triyoso, R. Hegde, S.B. Samavedam, and J.B.E. White Microelectron. Eng. 84 2007 2196
- (2007) Microelectron. Eng. , vol.84 , pp. 2196
- Schaeffer, J.K.¹ Gilmer, D.C.² Capasso, C.³ Kalpat, S.⁴ Taylor, B.⁵ Raymond, M.V.⁶ Triyoso, D.⁷ Hegde, R.⁸ Samavedam, S.B.⁹ White, J.B.E.¹⁰

22
- 77949761578
- L. Wu, H.Y. Yu, X. Li, K.L. Pey, J.S. Pan, J.W. Chai, Y.S. Chiu, C.T. Lin, J.H. Xu, H.J. Wann, X.F. Yu, D.Y. Lee, K.Y. Hsu, and H.J. Tao Appl. Phys. Lett. 96 2010 113510
- (2010) Appl. Phys. Lett. , vol.96 , pp. 113510
- Wu, L.¹ Yu, H.Y.² Li, X.³ Pey, K.L.⁴ Pan, J.S.⁵ Chai, J.W.⁶ Chiu, Y.S.⁷ Lin, C.T.⁸ Xu, J.H.⁹ Wann, H.J.¹⁰ Yu, X.F.¹¹ Lee, D.Y.¹² Hsu, K.Y.¹³ Tao, H.J.¹⁴

23
- 65949099111
- C. Gaumer, E. Martinez, S. Lhostis, C. Wiemer, M. Perego, V. Loup, D. Lafond, and J.-M. Fabbri J. Electrochem. Soc. 156 7 2009 G78
- (2009) J. Electrochem. Soc. , vol.156 , Issue.7 , pp. 78
- Gaumer, C.¹ Martinez, E.² Lhostis, S.³ Wiemer, C.⁴ Perego, M.⁵ Loup, V.⁶ Lafond, D.⁷ Fabbri, J.-M.⁸

24
- 54749151453
- Y.C. Ong, D.S. Ang, S.J. O'Shea, K.L. Pey, S.J. Wang, C.H. Tung, and X. Li J. Appl. Phys. 104 2008 064119
- (2008) J. Appl. Phys. , vol.104 , pp. 064119
- Ong, Y.C.¹ Ang, D.S.² O'Shea, S.J.³ Pey, K.L.⁴ Wang, S.J.⁵ Tung, C.H.⁶ Li, X.⁷

25
- 67649616856
- L.-P. Feng, and Z.-T. Liu Appl. Phys. Lett. 94 2009 252907
- (2009) Appl. Phys. Lett. , vol.94 , pp. 252907
- Feng, L.-P.¹ Liu, Z.-T.²

26
- 33748970025
- M. Liu, Q. Fang, G. He, L.Q. Zhu, and L.D. Zhang Appl. Surf. Sci. 252 24 2006 8673
- (2006) Appl. Surf. Sci. , vol.252 , Issue.24 , pp. 8673
- Liu, M.¹ Fang, Q.² He, G.³ Zhu, L.Q.⁴ Zhang, L.D.⁵

27
- 33646940153
- T. Ino, Y. Kamimuta, M. Suzuki, M. Koyama, and A. Nishiyama Jpn. J. Appl. Phys. 45 2006 2908
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 2908
- Ino, T.¹ Kamimuta, Y.² Suzuki, M.³ Koyama, M.⁴ Nishiyama, A.⁵

28
- 84871716443
- M. Koyarna, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashirna, M. Suzuki, C. Hongo, S. Inurniya, M. Takayanagi, and A. Nishiyama Tech. Dig. - Int. Electron. Devices Meet. 861 2002 849
- (2002) Tech. Dig. - Int. Electron. Devices Meet. , vol.861 , pp. 849
- Koyarna, M.¹ Kaneko, A.² Ino, T.³ Koike, M.⁴ Kamata, Y.⁵ Iijima, R.⁶ Kamimuta, Y.⁷ Takashirna, A.⁸ Suzuki, M.⁹ Hongo, C.¹⁰ Inurniya, S.¹¹ Takayanagi, M.¹² Nishiyama, A.¹³

29
- 33645162877
- H. Momida, T. Hamada, T. Yamamoto, T. Uda, N. Umezawa, T. Chikyow, K. Shiraishi, and T. Ohnob Appl. Phys. Lett. 88 2006 112903
- (2006) Appl. Phys. Lett. , vol.88 , pp. 112903
- Momida, H.¹ Hamada, T.² Yamamoto, T.³ Uda, T.⁴ Umezawa, N.⁵ Chikyow, T.⁶ Shiraishi, K.⁷ Ohnob, T.⁸

30
- 41649101225
- K. Iwamoto, Y. Kamimuta, A. Ogawa, Y. Watanabe, S. Migita, W. Mizubayashi, Y. Morita, M. Takahashi, H. Ota, T. Nabatame, and A. Toriumi Appl. Phys. Lett. 92 2008 132907
- (2008) Appl. Phys. Lett. , vol.92 , pp. 132907
- Iwamoto, K.¹ Kamimuta, Y.² Ogawa, A.³ Watanabe, Y.⁴ Migita, S.⁵ Mizubayashi, W.⁶ Morita, Y.⁷ Takahashi, M.⁸ Ota, H.⁹ Nabatame, T.¹⁰ Toriumi, A.¹¹

31
- 63749118040
- M. Suzuki, A. Kinoshita, T. Schimizu, and M. Koyama J. Appl. Phys. 105 2009 064105
- (2009) J. Appl. Phys. , vol.105 , pp. 064105
- Suzuki, M.¹ Kinoshita, A.² Schimizu, T.³ Koyama, M.⁴

32
- 64149125385
- K. Kita, and A. Toriumi Appl. Phys. Lett. 94 2009 132902
- (2009) Appl. Phys. Lett. , vol.94 , pp. 132902
- Kita, K.¹ Toriumi, A.²

33
- 33846981134
- C.L. Cheng, C.W. Liu, and J.T. Jeng Appl. Phys. Lett. 90 2007 62114
- (2007) Appl. Phys. Lett. , vol.90 , pp. 62114
- Cheng, C.L.¹ Liu, C.W.² Jeng, J.T.³

34
- 34547917220
- Y. Akasaka, G. Nakamura, K. Shiraishi, N. Umezawa, K. Yamabe, O. Ogawa, M. Lee, T. Amiaka, T. Kasuya, H. Watanabe, T. Chikyow, F. Ootsuka, Y. Nara, and K. Nakamura Jpn. J. Appl. Phys. 45 2006 L1289
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 1289
- Akasaka, Y.¹ Nakamura, G.² Shiraishi, K.³ Umezawa, N.⁴ Yamabe, K.⁵ Ogawa, O.⁶ Lee, M.⁷ Amiaka, T.⁸ Kasuya, T.⁹ Watanabe, H.¹⁰ Chikyow, T.¹¹ Ootsuka, F.¹² Nara, Y.¹³ Nakamura, K.¹⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.