Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Na, Kwang Duk ^a   Hwang, Cheol Seong ^a   Kim, Gee Man ^b   Choi, Kang Jun ^b   Jeong, Jae Hak ^b  

^a Seoul National University   (South Korea)

^b Process Development Division   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; REDUCING AGENTS; SURFACE CHEMISTRY; WORK FUNCTION;

ELECTRICAL THICKNESS; INTERFACE STATE DENSITY; PLASMA ENHANCED ATOMIC LAYER DEPOSITION; TUNABILITY;

THIN FILMS;

EID: 44349124490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2921785     Document Type: Article

References (13)

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