Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO 2 for the advanced gate stack

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Chang, K S ^a,e   Green, M L ^a   Suehle, J ^a   Vogel, E M ^a   Xiong, H ^a   Hattrick Simpers, J ^b   Takeuchi, I ^b   Famodu, O ^b   Ohmori, K ^c   Ahmet, P ^c   Chikyow, T ^c   Majhi, P ^d   Lee, B H ^d   Gardner, M ^d  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d SEMATECH   (United States)

^e UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLATBAND VOLTAGE SHIFTS; GATE ELECTRODE SYSTEMS; LEAKAGE CURRENT DENSITY; TERNARY METAL GATE ELECTRODES;

CURRENT DENSITY; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MAGNETRONS; NICKEL; SPUTTERING; TERNARY SYSTEMS; THIN FILMS;

ELECTRODES;

EID: 33749557453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357011     Document Type: Article

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