Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxides

Applied Physics Letters

Volumn 88, Issue 11, 2006, Pages

  Momida, Hiroyoshi ^a   Hamada, Tomoyuki ^a   Yamamoto, Takenori ^b   Uda, Tsuyoshi ^b   Umezawa, Naoto ^c   Chikyow, Toyohiro ^c   Shiraishi, Kenji ^d   Ohno, Takahisa ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b ADVANCESOFT CORPORATION   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; IONS; PERMITTIVITY; SEMICONDUCTOR DOPING; SILICATES;

BAND GAP; HF-BASED GATE OXIDES; LATTICE POLARIZATION; NITROGEN ATOM DOPING;

MOS DEVICES;

EID: 33645162877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2184991     Document Type: Article

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