Dielectric constant behavior of Hf-O-N system

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2908-2913

  Ino, Tsunehiro ^a   Kamimuta, Yuuichi ^a   Suzuki, Masamichi ^a   Koyama, Masato ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Clausius Mossotti; Dielectric; Film; Gate; Hafnia; Hafnium; HfO2; HfON; High k; Nitrogen; Oxynitride; Shannon

Indexed keywords

CONCENTRATION (PROCESS); DIELECTRIC MATERIALS; ENERGY GAP; GATES (TRANSISTOR); MICROSTRUCTURE; NITROGEN; PERMITTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

CLAUSIUS-MOSSOTTI; HAFNIA; HIGH-K; SHANNON;

HAFNIUM COMPOUNDS;

EID: 33646940153     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2908     Document Type: Article

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