Determination of work functions in the Ta1-xAlx Ny/HfO2 advanced gate stack using combinatorial methodology

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2641-2647

  Chang, Kao Shuo ^a,b   Green, Martin L ^c   Hattrick Simpers, Jason R ^a   Takeuchi, Ichiro ^b   Suehle, John S ^a   Celik, Ozgur ^d   De Gendt, Stefan ^e,f  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d RUTGERS UNIVERSITY   (United States)

^e IMEC   (Belgium)

^f UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Combinatorial methodology; Complementary metal oxide semiconductor (CMOS); Equivalent oxide thickness (EOT); Flatband voltage; Ta1 xAlxNy; Work function

Indexed keywords

TANTALUM;

COMBINATORIAL METHODOLOGY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); EQUIVALENT OXIDE THICKNESS (EOT); FLATBAND VOLTAGE; TA1-XALXNY;

WORK FUNCTION;

EID: 53749106002     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003091     Document Type: Article

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