GaN based 3D core-shell leds

International Journal of High Speed Electronics and Systems

Volumn 21, Issue 1, 2012, Pages

  Wang, Xue ^a   Li, Shunfeng ^a   FÜndling, Sönke ^a   Wei, Jiandong ^a   Erenburg, Milena ^a   Ledig, Johannes ^a   Wehmann, Hergo H ^a   Waag, Andreas ^a   Bergbauer, Werner ^b   Mandl, Martin ^b   Strassburg, Martin ^b   Steegmüller, Ulrich ^b  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

3D; core shell; GaN; LED; MOVPE

Indexed keywords

3D; 3D STRUCTURE; CATALYST-FREE; CORE SHELL STRUCTURE; CORE-SHELL; CORE-SHELL GEOMETRIES; GAN; GROWTH METHOD; GROWTH MODES; GROWTH OF GAN; GROWTH STRATEGY; HIGH ASPECT RATIO; KELVIN PROBE FORCE MICROSCOPY; METAL ORGANIC; N-POLAR; NOVEL ROUTE; PATTERNED SUBSTRATES; POLARITY EFFECT; SAPPHIRE SUBSTRATES; SELECTIVE AREA GROWTH; SELECTIVE ETCHING; SUBMICRON; SUBMICRON-RODS; SURFACE POLARITIES; THIN FILM LED; TRUNCATED PYRAMIDS;

ASPECT RATIO; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; SAPPHIRE; SHELLS (STRUCTURES); TRANSMISSION ELECTRON MICROSCOPY;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 84871558125     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156412500085     Document Type: Conference Paper

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