The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Liu, Fude ^a,c   Collazo, Ramon ^a   Mita, Seiji ^a   Sitar, Zlatko ^a   Duscher, Gerd ^a,b   Pennycook, Stephen J ^b  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC INTERFACE STRUCTURES; MACROSCOPIC DOMAINS; POLARITY INVERSION;

ELECTRON DIFFRACTION; HETEROJUNCTIONS; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 36248981988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2815748     Document Type: Article

References (21)

1. L. F. Eastman and U. K. Mishra, IEEE Spectrum 39, 28 (2002).
2. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006).
3. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. V. Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1448 (2001).
4. R. Collazo, S. Mita, R. Schlesser, and Z. Sitar, Phys. Status Solidi C 2, 2117 (2005).
5. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. L. Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, Phys. Status Solidi B 228, 505 (2001).
6. M. Sumiya and S. Fuke, MRS Internet J. Nitride Semicond. Res. 9, 1 (2004).
7. P. J. Schuck, M. D. Mason, R. D. Grober, O. Ambacher, A. P. Lima, C. Miskys, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. 79, 952 (2001).
8. R. Collazo, S. Mita, A. Aleksov, R. Schlesser, and Z. Sitar, J. Cryst. Growth 287, 586 (2006).
9. P. Stadelmann, Electron Microscopy Software (Java Version 1.3422W2003), CIME-EPFL, Switzerland, 1999 - 2003.
10. J. E. Northrup, J. Neugebauer, and L. T. Romano, Phys. Rev. Lett. 77, 103 (1996).
11. J. E. Northrup, Physica B 273-274, 130 (1999).
12. R. F. Egerton, Physical Principles of Electron Microscopy (Springer, New York, 2005), p. 177.
13. Optoelectronic Devices: III-Nitrides, edited by, M. Razeghi, and, M. Henini, (Elsevier, Amsterdam, 2004), p. 251.
14. H. M. Ng, W. Parz, N. G. Weimann, and A. Chowdhury, Jpn. J. Appl. Phys., Part 2 42, L1405 (2003).
15. D. B. Williams and C. B. Carter, Transmission Electron Microscopy: a Textbook for Materials Science (Plenum, New York, 1996), Vol. 2, p. 339.
16. W.-C. Yang, B. J. Rodriguez, M. Park, R. J. Nemanich, O. Ambacher, and V. Cimalla, J. Appl. Phys. 94, 5720 (2003).
17. K. A. Mkhoyan, P. E. Batson, J. Cha, W. J. Schaff, and J. Silcox, Science 312, 1354 (2006).
18. I. Levin and D. Brandon, J. Am. Ceram. Soc. 81, 1995 (1998).
19. P. D. Nellist, M. F. Chisholm, N. Dellby, O. L. Krivanek, M. F. Murfitt, Z. S. Szilagyi, A. R. Lupini, A. Borisevich, W. H. S., Jr., and S. J. Pennycook, Science 305, 1741 (2004).
20. CRC Handbook of Chemistry and Physics, 84th edition, edited by, D. R. Lide, (CRC, Boca Raton, FL, 2003), p. 9.
21. A. Aleksov, R. Collazo, S. Mita, R. Schlesser, and Z. Sitar, Appl. Phys. Lett. 89, 052117 (2006).