Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2157-2159

  Wei, Jiandong ^a   Neumann, Richard ^a   Wang, Xue ^a   Li, Shunfeng ^a   Fündling, Sönke ^a   Merzsch, Stephan ^a   Al Suleiman, Mohamed A M ^a   Sökmen, Ünsal ^a   Wehmann, Hergo H ^a   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

GaN; Kelvin probe force microscopy; Photovoltage; Polarity

Indexed keywords

AIR AMBIENT; BOTTOM SURFACES; EPITAXIALLY GROWN; GAN; GAN NANORODS; GAN SUBSTRATE; HIGH POWER ELECTRONICS; JOINING TECHNIQUES; KELVIN PROBE FORCE MICROSCOPY; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTO-VOLTAGE; PHOTOCHEMICAL REACTIVITY; POLARITY; POLARITY DEPENDENCE; SURFACE PHOTOVOLTAGES; UV ILLUMINATIONS; VERTICALLY ALIGNED;

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NANORODS; POWER ELECTRONICS; PROBES; SILICON COMPOUNDS; SUBSTRATES; SURFACE PROPERTIES;

GALLIUM NITRIDE;

EID: 79960733978     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000982     Document Type: Article

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