Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 817-823

  Lu, Hai ^a   Cao, Dongsheng ^a   Xiu, Xiangqian ^a   Xie, Zili ^a   Zhang, Rong ^a   Zheng, Youdou ^a   Li, Zhonghui ^b  

^a NANJING UNIVERSITY   (China)

^b National Key Laboratory of Monolithic Integrated Circuits and Modules   (China)

Author keywords

Bulk gallium nitride; Electron beam induced current; Homoepitaxy; Schottky rectifier

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; ELECTRON BEAMS; EPILAYERS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; VOLTAGE CONTROL;

BULK GALLIUM NITRIDE; ELECTRON-BEAM INDUCED CURRENTS; HOMOEPITAXIAL PROCESS; SCHOTTKY RECTIFIERS;

GALLIUM NITRIDE;

EID: 41449097234     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.053     Document Type: Article

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