Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

Chinese Physics B

Volumn 20, Issue 3, 2011, Pages

  Du, Da Chao ^a   Zhang, Jin Cheng ^a   Ou, Xin Xiu ^a   Wang, Hao ^a   Chen, Ke ^a   Xue, Jun Shuai ^a   Xu, Sheng Rui ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

KOH etching; N polar GaN; yellow luminescence

Indexed keywords

BAND-EDGE EMISSION INTENSITY; ETCHING TIME; INVERSE POLARITY; KOH ETCHING; KOH SOLUTION; N-POLAR GAN; ROUGH SURFACES; SCANNING ELECTRON MICROSCOPE; YELLOW LUMINESCENCE;

ETCHING; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

LUMINESCENCE;

EID: 79955676387     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/3/037805     Document Type: Article

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