High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2149-2154

  VanMil, B L ^a   Guo, Huicheng ^a   Holbert, L J ^a   Lee, Kyoungnae ^a   Myers, T H ^a   Liu, Ting ^b   Korakakis, D ^b  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b West Virginia University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM EQUIVALENT PRESSURE (BEP); HYDRIDE VAPOR PHASE EPITAXY (HVPE); SURFACE POLARITY; VACUUM DECOMPOSITION;

ACTIVATION ENERGY; DISSOCIATION; FREE ENERGY; HIGH TEMPERATURE EFFECTS; HYDROGEN; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; POINT DEFECTS; PRESSURE EFFECTS; PYROLYSIS; SAPPHIRE; SEMICONDUCTOR GROWTH; SPECTROPHOTOMETERS; THERMOCOUPLES;

GALLIUM NITRIDE;

EID: 4944238636     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1768531     Document Type: Conference Paper

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