N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 164-167

  Bergbauer, W ^a,c   Strassburg, M ^a   Klper, Ch ^a   Linder, N ^a   Roder, C ^b   Lhnemann, J ^b   Trampert, A ^b   Fndling, S ^c   Li, S F ^c   Wehmann, H H ^c   Waag, A A ^c  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

A1. Crystal morphology; A1. Nanostructures; A2. Metalorganic vapour phase epitaxy; B1. Nitrides

Indexed keywords

A1. NANOSTRUCTURES; B1. NITRIDES; CARRIER GAS; CRYSTAL MORPHOLOGIES; GAN NANORODS; GROWTH PARAMETERS; GROWTH PROCESS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MORPHOLOGICAL PROPERTIES; MOVPE; MOVPE GROWTH; SHAPE-CONTROLLED;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NANOIMPRINT LITHOGRAPHY; NANORODS;

ASPECT RATIO;

EID: 79551681368     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.067     Document Type: Article

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