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Volumn 156, Issue 1, 2012, Pages 295-315

Recent advances in GaN nanowires: Surface-controlled conduction and sensing applications

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EID: 84870521600     PISSN: 0933033X     EISSN: None     Source Type: Book Series    
DOI: 10.1007/978-3-642-23521-4_10     Document Type: Article
Times cited : (3)

References (67)
  • 3
    • 0038242740 scopus 로고    scopus 로고
    • Group III- and Group IV Nitride Nanorods and Nanowires, Ch. 9
    • Z.L. Wang (ed.), Kluwer Academic Publisher, Boston
    • L.C. Chen, K.H. Chen, C.C. Chen, Group III- and Group IV Nitride Nanorods and Nanowires, Ch. 9. In: Z.L. Wang (ed.) Nanowires and Nanobelts: Materials, Properties and Devices, Vol. 1. (Kluwer Academic Publisher, Boston 2003)
    • (2003) Nanowires and Nanobelts: Materials, Properties and Devices , vol.1
    • Chen, L.C.1    Chen, K.H.2    Chen, C.C.3
  • 4
    • 72449163084 scopus 로고    scopus 로고
    • One-dimensional group III-nitrides: Growth, properties, and applications in nanosensing and nano-optoelectronics
    • S. Chattopadhyay, A. Ganguly, K.H. Chen, L.C. Chen, One-dimensional group III-nitrides: growth, properties, and applications in nanosensing and nano-optoelectronics. Crit. Rev. Solid State Mater. Sci. 34, 224-279 (2009)
    • (2009) Crit. Rev. Solid State Mater. Sci , vol.34 , pp. 224-279
    • Chattopadhyay, S.1    Ganguly, A.2    Chen, K.H.3    Chen, L.C.4
  • 5
    • 0037418379 scopus 로고    scopus 로고
    • One-dimensional nanostructures: Synthesis, characterization, and applications
    • Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, H. Yan, One-dimensional nanostructures: synthesis, characterization, and applications. Adv. Mater. 15, 353-389 (2003)
    • (2003) Adv. Mater , vol.15 , pp. 353-389
    • Xia, Y.1    Yang, P.2    Sun, Y.3    Wu, Y.4    Mayers, B.5    Gates, B.6    Yin, Y.7    Kim, F.8    Yan, H.9
  • 6
    • 0141642013 scopus 로고    scopus 로고
    • Self-forming nanoscale devices
    • L. Samuelson, Self-forming nanoscale devices. Mater. Today 6, 22-31 (2003)
    • (2003) Mater. Today , vol.6 , pp. 22-31
    • Samuelson, L.1
  • 7
    • 2442417778 scopus 로고    scopus 로고
    • Nanostructures of zinc oxide
    • Z.L. Wang, Nanostructures of zinc oxide. Mater. Today 7, 26-33 (2004)
    • (2004) Mater. Today , vol.7 , pp. 26-33
    • Wang, Z.L.1
  • 10
    • 33746893026 scopus 로고    scopus 로고
    • Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors
    • Y. Li, J. Xiang, F. Qian, S. Gradecak, Y. Wu, H. Yan, D.A. Blom, C.M. Lieber, Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 6, 1468-1473 (2006)
    • (2006) Nano Lett , vol.6 , pp. 1468-1473
    • Li, Y.1    Xiang, J.2    Qian, F.3    Gradecak, S.4    Wu, Y.5    Yan, H.6    Blom, D.A.7    Lieber, C.M.8
  • 11
    • 3042835508 scopus 로고    scopus 로고
    • Highbrightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
    • H.M. Kim, Y.H. Cho, H. Lee, S.I. Kim, S.R. Ryu, D.Y. Kim, T.W. Kang, K.S. Chung, Highbrightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays. Nano Lett. 4, 1059-1062 (2004)
    • (2004) Nano Lett , vol.4 , pp. 1059-1062
    • Kim, H.M.1    Cho, Y.H.2    Lee, H.3    Kim, S.I.4    Ryu, S.R.5    Kim, D.Y.6    Kang, T.W.7    Chung, K.S.8
  • 12
    • 28144437037 scopus 로고    scopus 로고
    • Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes
    • F. Qian, S. Gradecak, Y. Li, C.Y. Wen, C.M. Lieber, Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. Nano Lett. 5, 2287-2291 (2005)
    • (2005) Nano Lett , vol.5 , pp. 2287-2291
    • Qian, F.1    Gradecak, S.2    Li, Y.3    Wen, C.Y.4    Lieber, C.M.5
  • 14
    • 1942445309 scopus 로고    scopus 로고
    • Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
    • S. Han, W. Jin, D. Zhang, T. Tang, C. Li, X. Liu, Z. Liu, B. Lei, C. Zhou, Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination. Chem. Phys. Lett. 389, 176-180 (2004)
    • (2004) Chem. Phys. Lett , vol.389 , pp. 176-180
    • Han, S.1    Jin, W.2    Zhang, D.3    Tang, T.4    Li, C.5    Liu, X.6    Liu, Z.7    Lei, B.8    Zhou, C.9
  • 16
    • 48249145188 scopus 로고    scopus 로고
    • On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity
    • R.S. Chen, S.W. Wang, Z.H. Lan, J.T.H. Tsai, C.T. Wu, L.C. Chen, K.H. Chen, Y.S. Huang, C.C. Chen, On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity. Small 4, 925-929 (2008)
    • (2008) Small , vol.4 , pp. 925-929
    • Chen, R.S.1    Wang, S.W.2    Lan, Z.H.3    Tsai, J.T.H.4    Wu, C.T.5    Chen, L.C.6    Chen, K.H.7    Huang, Y.S.8    Chen, C.C.9
  • 18
    • 59349103623 scopus 로고    scopus 로고
    • Functionalized GaN nanowire-based electrode for direct label-free voltammetric detection of DNA hybridization
    • A. Ganguly, C.P. Chen, Y.T. Lai, C.C. Kuo, C.W. Hsu, K.H. Chen, L.C. Chen, Functionalized GaN nanowire-based electrode for direct label-free voltammetric detection of DNA hybridization. J. Mater. Chem. 19, 928-933 (2009)
    • (2009) J. Mater. Chem , vol.19 , pp. 928-933
    • Ganguly, A.1    Chen, C.P.2    Lai, Y.T.3    Kuo, C.C.4    Hsu, C.W.5    Chen, K.H.6    Chen, L.C.7
  • 19
    • 66449111861 scopus 로고    scopus 로고
    • Coaxial group III-nitride nanowire photovoltaics
    • Y. Dong, B. Tian, T.J. Kempa, C.M. Lieber, Coaxial group III-nitride nanowire photovoltaics. Nano Lett. 9, 2183-2187 (2009)
    • (2009) Nano Lett , vol.9 , pp. 2183-2187
    • Dong, Y.1    Tian, B.2    Kempa, T.J.3    Lieber, C.M.4
  • 20
    • 33846644090 scopus 로고    scopus 로고
    • Diameter dependent transport properties of gallium nitride nanowire field effect transistors
    • A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, S.N. Mohammad, Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Appl. Phys. Lett. 90, 043104 (2007)
    • (2007) Appl. Phys. Lett , vol.90 , pp. 043104
    • Motayed, A.1    Vaudin, M.2    Davydov, A.V.3    Melngailis, J.4    He, M.5    Mohammad, S.N.6
  • 25
    • 70350014961 scopus 로고    scopus 로고
    • Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter
    • H.Y. Chen, R.S. Chen, F.C. Chang, L.C. Chen, K.H. Chen, Y.J. Yang, Size-dependent photoconductivity and dark conductivity of m-axial GaN nanowires with small critical diameter. Appl. Phys. Lett. 95, 143123 (2009)
    • (2009) Appl. Phys. Lett , vol.95 , pp. 143123
    • Chen, H.Y.1    Chen, R.S.2    Chang, F.C.3    Chen, L.C.4    Chen, K.H.5    Yang, Y.J.6
  • 29
    • 71949108889 scopus 로고    scopus 로고
    • Molecule-modulated photoconductivity and gainamplified selective gas sensing in polar GaN nanowires
    • R.S. Chen, C.Y. Lu, K.H. Chen, L.C. Chen, Molecule-modulated photoconductivity and gainamplified selective gas sensing in polar GaN nanowires. Appl. Phys. Lett. 95, 233119 (2009)
    • (2009) Appl. Phys. Lett , vol.95 , pp. 233119
    • Chen, R.S.1    Lu, C.Y.2    Chen, K.H.3    Chen, L.C.4
  • 30
    • 21544463523 scopus 로고
    • High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
    • M. Asif Khan, J.N. Kuznia, D.T. Olson, J.M. Van Hove, M. Blasingame, L.F. Reitz, High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers. Appl. Phys. Lett. 60, 2917 (1992)
    • (1992) Appl. Phys. Lett , vol.60 , pp. 2917
    • Asif, K.M.1    Kuznia, J.N.2    Olson, D.T.3    van Hove, J.M.4    Blasingame, M.5    Reitz, L.F.6
  • 32
    • 0000803077 scopus 로고    scopus 로고
    • High responsitivity intrinsic photoconductors based on AlxGa1xN
    • B.W. Lim, Q.C. Chen, J.Y. Yang, M. Asif Khan, High responsitivity intrinsic photoconductors based on AlxGa1xN. Appl. Phys. Lett. 68, 3761 (1996)
    • (1996) Appl. Phys. Lett , vol.68 , pp. 3761
    • Lim, B.W.1    Chen, Q.C.2    Yang, J.Y.3    Asif, K.M.4
  • 40
    • 6144261628 scopus 로고    scopus 로고
    • Semiconductor ultraviolet detectors
    • M. Razeghi, A. Rogalski, Semiconductor ultraviolet detectors. J. Appl. Phys. 79, 7433 (1996)
    • (1996) J. Appl. Phys , vol.79 , pp. 7433
    • Razeghi, M.1    Rogalski, A.2
  • 42
    • 0031551651 scopus 로고    scopus 로고
    • Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
    • J.F. Muth, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, B.P. Keller, U.K. Mishra, S.P. DenBaars, Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. Appl. Phys. Lett. 71, 2572 (1997)
    • (1997) Appl. Phys. Lett , vol.71 , pp. 2572
    • Muth, J.F.1    Lee, J.H.2    Shmagin, I.K.3    Kolbas, R.M.4    Casey, H.C.5    Keller, B.P.6    Mishra, U.K.7    Denbaars, S.P.8
  • 44
    • 0142075255 scopus 로고    scopus 로고
    • Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections
    • T. Kuykendall, P. Pauzauskie, S. Lee, Y. Zhang, J. Goldberger, P. Yang: Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections. Nano Lett. 3, 1063-1066 (2003)
    • (2003) Nano Lett , vol.3 , pp. 1063-1066
    • Kuykendall, T.1    Pauzauskie, P.2    Lee, S.3    Zhang, Y.4    Goldberger, J.5    Yang, P.6
  • 46
    • 0000823384 scopus 로고    scopus 로고
    • Gallium nitride nanowire nanodevices
    • Y. Huang, X. Duan, Y. Cui, C.M. Lieber, Gallium nitride nanowire nanodevices. Nano Lett. 2, 101-104 (2002)
    • (2002) Nano Lett , vol.2 , pp. 101-104
    • Huang, Y.1    Duan, X.2    Cui, Y.3    Lieber, C.M.4
  • 47
    • 36449004678 scopus 로고
    • Photoconductive ultraviolet sensor using Mgdoped GaN on Si(111)
    • K.S. Stevens, M. Kinniburgh, R. Beresford, Photoconductive ultraviolet sensor using Mgdoped GaN on Si(111). Appl. Phys. Lett. 66, 3518 (1995)
    • (1995) Appl. Phys. Lett , vol.66 , pp. 3518
    • Stevens, K.S.1    Kinniburgh, M.2    Beresford, R.3
  • 52
    • 0000189249 scopus 로고    scopus 로고
    • Dependence of impurity incorporation on the polar direction of GaN film growth
    • M. Sumiya, K. Yoshimura, K. Ohtsuka, S. Fuke, Dependence of impurity incorporation on the polar direction of GaN film growth. Appl. Phys. Lett. 76, 2098 (2000)
    • (2000) Appl. Phys. Lett , vol.76 , pp. 2098
    • Sumiya, M.1    Yoshimura, K.2    Ohtsuka, K.3    Fuke, S.4
  • 53
    • 0000388172 scopus 로고    scopus 로고
    • Optical quenching of the photoconductivity in n-type GaN
    • T.Y. Lin, H.C. Yang, Y.F. Chen, Optical quenching of the photoconductivity in n-type GaN. J. Appl. Phys. 87, 3404 (2000)
    • (2000) J. Appl. Phys , vol.87 , pp. 3404
    • Lin, T.Y.1    Yang, H.C.2    Chen, Y.F.3
  • 54
    • 0031124281 scopus 로고    scopus 로고
    • Deep levels and persistent photoconductivity in GaN thin films
    • C.H. Qiu, J.I. Pankove, Deep levels and persistent photoconductivity in GaN thin films. Appl. Phys. Lett. 70, 1983 (1997)
    • (1997) Appl. Phys. Lett , vol.70 , pp. 1983
    • Qiu, C.H.1    Pankove, J.I.2
  • 55
    • 78649760584 scopus 로고    scopus 로고
    • Direct voltammetric sensing of L-cysteine at pristine GaN nanowires electrode
    • Y.T. Lai, A. Ganguly, K.H. Chen, L.C. Chen, Direct voltammetric sensing of L-cysteine at pristine GaN nanowires electrode. Biosens. Bioelectron. 26, 1688-1691 (2010)
    • (2010) Biosens. Bioelectron , vol.26 , pp. 1688-1691
    • Lai, Y.T.1    Ganguly, A.2    Chen, K.H.3    Chen, L.C.4
  • 57
    • 79954577320 scopus 로고    scopus 로고
    • Ultrasensitive in situ label-free DNA detection using a GaN nanowire-based extended-gate field-effect-transistor sensor
    • C.P. Chen, A. Ganguly, C.Y. Lu, T.Y. Chen, C.C. Kuo, W.H. Tu, R.S. Chen, W.B. Fischer, K.H. Chen, L.C. Chen, Ultrasensitive in situ label-free DNA detection using a GaN nanowire-based extended-gate field-effect-transistor sensor. Anal. Chem. 83, 1938-1943 (2011)
    • (2011) Anal. Chem , vol.83 , pp. 1938-1943
    • Chen, C.P.1    Ganguly, A.2    Lu, C.Y.3    Chen, T.Y.4    Kuo, C.C.5    Tu, W.H.6    Chen, R.S.7    Fischer, W.B.8    Chen, K.H.9    Chen, L.C.10
  • 60
    • 33645012936 scopus 로고    scopus 로고
    • Assessment of GaN chips for culturing cerebellar granule neurons
    • T.H. Young, C.R. Chen, Assessment of GaN chips for culturing cerebellar granule neurons. Biomaterials 27, 3361-3367 (2006)
    • (2006) Biomaterials , vol.27 , pp. 3361-3367
    • Young, T.H.1    Chen, C.R.2
  • 61
    • 42649128092 scopus 로고    scopus 로고
    • Novel semiconductor materials for the development of chemical sensors and biosensors: A review
    • N. Chaniotakis, N. Sofikiti, Novel semiconductor materials for the development of chemical sensors and biosensors: A review. Anal. Chim. Acta 615, 1-9 (2008)
    • (2008) Anal. Chim. Acta , vol.615 , pp. 1-9
    • Chaniotakis, N.1    Sofikiti, N.2
  • 62
    • 34547163977 scopus 로고    scopus 로고
    • The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications
    • S.J. Pearton, D.P. Norton, F. Ren, The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications. Small 3, 1144-1150 (2007)
    • (2007) Small , vol.3 , pp. 1144-1150
    • Pearton, S.J.1    Norton, D.P.2    Ren, F.3
  • 63
    • 34548698923 scopus 로고    scopus 로고
    • Fabrication and characterization of DNA-functionalized GaN nanowires
    • B.S. Simpkins, K.M. McCoy, L.J. Whitman, P.E. Pehrsson, Fabrication and characterization of DNA-functionalized GaN nanowires. Nanotechnology 18, 355301 (2007)
    • (2007) Nanotechnology , vol.18 , pp. 355301
    • Simpkins, B.S.1    McCoy, K.M.2    Whitman, L.J.3    Pehrsson, P.E.4
  • 64
    • 78650248741 scopus 로고    scopus 로고
    • GaN nanowire functionalized with atomic layer deposition techniques for enhanced immobilization of biomolecules
    • D.J. Guo, A.I. Abdulagatov, D.M. Rourke, K.A. Bertness, S.M. George, Y.C. Lee, W. Tan, GaN nanowire functionalized with atomic layer deposition techniques for enhanced immobilization of biomolecules. Langmuir 26, 18382-18391 (2010)
    • (2010) Langmuir , vol.26 , pp. 18382-18391
    • Guo, D.J.1    Abdulagatov, A.I.2    Rourke, D.M.3    Bertness, K.A.4    George, S.M.5    Lee, Y.C.6    Tan, W.7
  • 66
    • 0043269702 scopus 로고    scopus 로고
    • Probing biomolecular interactions at conductive and semiconductive surfaces by impedance spectroscopy: Routes to impedimetric immunosensors, DNA-sensors, and enzyme biosensors
    • E. Katz, I. Willner, Probing biomolecular interactions at conductive and semiconductive surfaces by impedance spectroscopy: routes to impedimetric immunosensors, DNA-sensors, and enzyme biosensors. Electroanalysis 15, 913-947 (2003)
    • (2003) Electroanalysis , vol.15 , pp. 913-947
    • Katz, E.1    Willner, I.2
  • 67
    • 77950235053 scopus 로고    scopus 로고
    • DNA hybridization sensors based on electrochemical impedance spectroscopy as a detection tool
    • J.Y. Park, S.M. Park, DNA hybridization sensors based on electrochemical impedance spectroscopy as a detection tool. Sensors 9, 9513-9532 (2009)
    • (2009) Sensors , vol.9 , pp. 9513-9532
    • Park, J.Y.1    Park, S.M.2


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