Size-dependent impurity activation energy in GaN nanowires

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Yoon, J ^a   Girgis, A M ^b   Shalish, I ^a,c   Ram Mohan, L R ^b   Narayanamurti, V ^a  

^a HARVARD UNIVERSITY   (United States)

^b Worcester Polytechnic Institute   (United States)

^c BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATED VALUES; DIELECTRIC CONFINEMENTS; FINITE-ELEMENT ANALYSIS; GAN NANOWIRES; IMPURITY ACTIVATIONS; INVERSE DEPENDENCES; MULTICHANNEL; SUB BANDS; SURFACE CONDUCTIONS;

ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPURITIES; NANOWIRES; SEMICONDUCTING GALLIUM;

ACTIVATION ENERGY;

EID: 64349098477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115769     Document Type: Article

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