Optical properties of functionalized GaN nanowires

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Hsu, Chih Wei ^a   Ganguly, Abhijit ^b   Chen, Chin Pei ^b   Kuo, Chun Chiang ^c   Paskov, Plamen P ^a   Holtz, Per Olof ^a   Chen, Li Chyong ^b   Chen, Kuei Hsien ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

3-MERCAPTOPROPYLTRIMETHOXYSILANE; BAND EDGE; DEFECT LEVELS; FUNCTIONALIZATIONS; FUNCTIONALIZED; GAN NANOWIRES; SURFACE BAND BENDING; SURFACE CONDITIONS; SURFACE FUNCTIONALIZATION; SURFACE PASSIVATION; TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM NITRIDE; NANOWIRES; PASSIVATION; PHOTOLUMINESCENCE;

OPTICAL PROPERTIES;

EID: 79953000520     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3552919     Document Type: Article

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