Electrical performance of gallium nitride nanocolumns

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 37, Issue 1-2, 2007, Pages 200-203

  Niebelschutz M ^a   Cimalla, V ^a   Ambacher, O ^a   Machleidt, T ^a   Ristic, J ^b   Calleja, E ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Atomic force microscopy (AFM); Conductivity; Electrical performance; Gallium nitride; Nanocolumns; Nanowire

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; SILICON;

ELECTRICAL PERFORMANCE; NANO ANALYTICS; NANOCOLUMNS; SCHOTTKY CONTACT;

NANOSTRUCTURED MATERIALS;

EID: 33947146108     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.10.007     Document Type: Article

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