Simulation of high-efficiency GaN/InGaN p-i-n solar cell with suppressed polarization and barrier effects

IEEE Journal of Quantum Electronics

Volumn 49, Issue 1, 2013, Pages 17-23

  Chang, Jih Yuan ^a   Yen, Shih Hsun ^a   Chang, Yi An ^a   Kuo, Yen Kuang ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Nitrogen compounds; photovoltaic cells; polarization

Indexed keywords

BAND ENGINEERING; BARRIER EFFECTS; CARRIER COLLECTION; CRITICAL ISSUES; DEGREE OF POLARIZATION; GAN/INGAN; HETERO-INTERFACES; PHOTOVOLTAIC CHARACTERISTICS; SOLAR CELL STRUCTURES;

CONVERSION EFFICIENCY; NITROGEN COMPOUNDS; PHOTOVOLTAIC CELLS; SOLAR CELLS;

POLARIZATION;

EID: 84870509418     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2225601     Document Type: Article

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