Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2795-2797

  Moret, M ^a   Gil, B ^a   Ruffenach, S ^a   Briot, O ^a   Giesen, Ch ^b   Heuken, M ^b   Rushworth, S ^c   Leese, T ^c   Succi, M ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b AIXTRON AG   (Germany)

^c SAFC Hitech   (United Kingdom)

^d SAES GETTERS S P A   (Italy)

Author keywords

A1. Band Gap; A1. Bowing Parameter; A3. MOCVD; B1. InGaN

Indexed keywords

A1. BAND GAP; A1. BOWING PARAMETER; A3. MOCVD; B1. INGAN; BAND GAPS; BOWING PARAMETERS; COMPOSITION RANGES; DOPING EFFECTS; ELECTRON CONCENTRATION; INHOMOGENEITIES; LINE SHAPE; METAL-ORGANIC; STRUCTURAL INVESTIGATION; VAPOUR-PHASE;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ENERGY GAP; GALLIUM; INDIUM ALLOYS; PHOTOLUMINESCENCE;

CERIUM ALLOYS;

EID: 65949083779     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.009     Document Type: Article

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