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Journal of Crystal Growth

Volumn 327, Issue 1, 2011, Pages 202-204

Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN

(5) Zhao, Wei a Wang, Lai a Wang, Jiaxing a Hao, Zhibiao a Luo, Yi a

a TSINGHUA UNIVERSITY (China)

Author keywords

A1. Line defects; A1. Roughening; A1. Stresses; B1. Nitrides

Indexed keywords

A1. ROUGHENING; A1. STRESSES; B1. NITRIDES; COMPRESSIVE STRAIN; CRITICAL THICKNESS; CRITICAL VALUE; DISLOCATION GENERATION; LINE DEFECTS; THEORETICAL STUDY; THREE-DIMENSIONAL GROWTH;

FILM GROWTH; INDIUM; THREE DIMENSIONAL;

GALLIUM NITRIDE;

EID: 79960176510 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.05.002 Document Type: Article

Times cited : (54)

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