Simulation and optimization of 420 nm InGaN/GaN laser diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3944, Issue , 2000, Pages

  Piprek, Joachim ^a   Sink, R Kehl ^a   Hansen, Monica A ^a   Bowers, John E ^a   DenBaars, Steve P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0033711192     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (41)