Numerical study of the effects of hetero-interfaces, polarization charges, and step-graded interlayers on the photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell

IEEE Journal of Quantum Electronics

Volumn 48, Issue 3, 2012, Pages 367-374

  Kuo, Yen Kuang ^a   Chang, Jih Yuan ^a   Shih, Ya Hsuan ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

Nitrogen compounds; Photovoltaic cells; Polarization

Indexed keywords

CRITICAL EFFECTS; DETRIMENTAL EFFECTS; GAN/INGAN; HETERO-INTERFACES; HIGH QUALITY CRYSTALS; NUMERICAL STUDIES; P-TYPE DOPING; PHOTOVOLTAIC PROPERTY; POLARIZATION CHARGES; SOLAR CELL PERFORMANCE;

GALLIUM NITRIDE; NITROGEN COMPOUNDS; PHOTOVOLTAIC CELLS; POLARIZATION;

PHOTOVOLTAIC EFFECTS;

EID: 84856969736     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2181972     Document Type: Article

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