The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Zhu, Di ^a   Xu, Jiuru ^a   Noemaun, Ahmed N ^a   Kim, Jong Kyu ^a   Schubert, E Fred ^a   Crawford, Mary H ^b   Koleske, Daniel D ^b  

^a Research Rensselaer Polytechnic Institute   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIODES; DOPING (ADDITIVES); LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES;

IDEALITY FACTORS; LIGHT EMITTING DIODE LEDS; MULTIPLE QUANTUM WELLS; NUMERICAL SIMULATIONS; QUANTUM BARRIERS; SI-DOPING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 61349101730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089687     Document Type: Article

References (15)

1. A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer, and J. J. Figiel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1728307 84, 3394 (2004).
2. M. Koike, N. Shibata, H. Kato, and Y. Takahashi, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 10.1109/2944.999180 8, 271 (2002).
3. J. M. Shah, Y. -L. Li, Th. Gessmann, and E. F. Schubert, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1593218 94, 2627 (2003).
4. H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116351 68, 2867 (1996).
5. P. Perlin, M. Osiński, P. G. Eliseev, V. A. Smagley, J. Mu, M. Banas, and P. Sartori, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117026 69, 1680 (1996).
6. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2002.802601 23, 535 (2002).
7. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1647273 84, 1046 (2004).
8. Ting Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/3.914403 37, 538 (2001).
9. C. Sah, R. N. Noyce, and W. Shockley, Proc. IRE PIREAE 0096-8390 10.1109/JRPROC.1957.278528 45, 1228 (1957).
10. E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, UK, 2006).
11. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116177 68, 2541 (1996).
12. S. L. Chuang and C. S. Chang, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/12/3/004 12, 252 (1997).
13. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.R10024 56, R10024 (1997).
14. F. Bernardini, in Nitride Semiconductor Devices: Principles and Simulation, edited by, J. Piprek, (Wiley-VCH, Weinheim, 2007), pp. 49-67.
15. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2963029 93, 041102 (2008).