Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 4, 2012, Pages

  Browne, David A ^a   Young, Erin C ^a   Lang, Jordan R ^a   Hurni, Christophe A ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA-MOLECULAR-BEAM EPITAXY; FLUX RATES; GAN SUBSTRATE; GROUP III; HYDROGEN INCORPORATION; IMPURITY ELEMENT; IMPURITY INCORPORATION; INDIUM CONTENT; NON-POLAR; SAPPHIRE TEMPLATES; SEMIPOLAR; SEMIPOLAR GAN;

AMMONIA; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; HYDROGEN; MOLECULAR BEAM EPITAXY; SAPPHIRE; SUBSTRATES; SURFACE MORPHOLOGY;

INDIUM;

EID: 84863669015     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4727967     Document Type: Article

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