Single germanium quantum-dot placement along with self-aligned electrodes for effective management of single charge tunneling

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3224-3230

  Chen, Inn Hao ^a   Chen, Kuan Hung ^a   Lai, Wei Ting ^a   Li, Pei Wen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Ge; quantum dot (QD) placementself aligned electrode; single electron

Indexed keywords

BI-LAYER; CHARGE TUNNELING; CLOSE PROXIMITY; COULOMB DIAMONDS; COULOMB OSCILLATION; EFFECTIVE MANAGEMENT; GE QUANTUM DOT; SELF-ALIGNED ELECTRODES; SELF-ALIGNING; SINGLE ELECTRON; SINGLE HOLE TRANSISTORS;

ELECTRODES; ELECTRONIC STRUCTURE; NANORODS; SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM;

EID: 84870274599     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2217973     Document Type: Article

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