CMOS-compatible fabrication of room-temperature single-electron devices

Nature Nanotechnology

Volumn 3, Issue 10, 2008, Pages 603-608

  Ray, Vishva ^a   Subramanian, Ramkumar ^a   Bhadrachalam, Pradeep ^a   Ma, Liang Chieh ^a   Kim, Choong Un ^a   Koh, Seong Jin ^a  

^a The University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRON DEVICES; ELECTRONS; NANOTECHNOLOGY;

CMOS FABRICATION TECHNOLOGY; COULOMB OSCILLATION; COULOMB STAIRCASE; GEOMETRICAL CONTROL; HIGH CHARGE SENSITIVITY; SINGLE-ELECTRON DEVICES; SOURCE AND DRAIN ELECTRODES; THIN DIELECTRIC FILM;

FABRICATION;

ARTICLE; BIOCHEMICAL EQUIPMENT; DEVICE; ELECTRODE; ELECTRON TRANSPORT; EQUIPMENT DESIGN; NANOANALYSIS; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; SINGLE ELECTRON DEVICE;

EID: 53549134234     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.267     Document Type: Article

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