Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

Nanotechnology

Volumn 21, Issue 50, 2010, Pages

  Chien, C Y ^a   Chang, Y J ^a   Chang, J E ^a   Lee, M S ^a   Chen, W Y ^a   Hsu, T M ^a   Li, P W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GE CONTENT; GE QUANTUM DOT; GROWTH METHOD; INTERNAL STRUCTURE; PHOTO-VOLTAIC EFFICIENCY; PHOTOLUMINESCENCE PROPERTIES; PHOTOVOLTAICS; POLY-SI; POLY-SIGE; PROCESSING CONDITION; QD ARRAYS; SPATIAL DENSITIES;

OPTICAL WAVEGUIDES; PHOTOVOLTAIC EFFECTS; POLYSILICON; SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM;

EID: 78650141966     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/50/505201     Document Type: Article

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