Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1-xGex-on-insulator

Nanotechnology

Volumn 18, Issue 14, 2007, Pages

  Lai, W T ^a   Li, P W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GROWTH KINETICS; NANOCRYSTALS; NANOWIRES; PHOTOEMISSION; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION;

GEOMETRIC PATTERN; NANOCRYSTAL NONVOLATILE MEMORY DEVICE; SINGLE ELECTRON DEVICES; THERMAL OXIDATION;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; DENSITY; DEVICE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; GROWTH ACCELERATION; HEAT; INFRARED RADIATION; INSULATOR ELEMENT; KINETICS; OXIDATION; PRIORITY JOURNAL;

EID: 33947117461     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/14/145402     Document Type: Article

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